ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Arvind Pawan Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kaile Zhao, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the design, fabrication and characterization of a II-VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 μm. Absorption, photocurrent measurements yield results consistent with conventional III-V QWIPs.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
PublisherOptical Society of America (OSA)
PagesCTu2J.5
ISBN (Print)9781557529435
DOIs
StatePublished - 2012
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2012

Other

OtherCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Ravikumar, A. P., Alfaro-Martinez, A., Chen, G., Zhao, K., Tamargo, M. C., Gmachl, C. F., & Shen, A. (2012). ZnCdSe/ZnCdMgSe quantum well infrared photodetector. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. CTu2J.5). (CLEO: Science and Innovations, CLEO_SI 2012). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2012.ctu2j.5