ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Arvind Pawan Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kaile Zhao, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the design, fabrication and characterization of a II-VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 μm. Absorption, photocurrent measurements yield results consistent with conventional III-V QWIPs.

Original languageEnglish (US)
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
StatePublished - Dec 6 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'ZnCdSe/ZnCdMgSe quantum well infrared photodetector'. Together they form a unique fingerprint.

Cite this