ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Arvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We report the design, fabrication and characterization of a II-VI Zn 0.51Cd0.49Se /Zn0.45Cd0.42Mg 0.13Se-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at 8.7 μm. The good growth quality of the epitaxial layers was verified by xray diffraction measurements. Absorption and photocurrent measurements yield results consistent with conventional III-V QWIPs. Photocurrent measurements reveal an exponential decrease with temperature. In addition, we also observe more than 4 orders of magnitude increase in photocurrent with applied bias. By compensating the drop in temperature performance with an increase in applied bias, we achieve an operating temperature of up to 140K and a responsivity of 1-10 μA/W.

Original languageEnglish (US)
Pages (from-to)22391-22397
Number of pages7
JournalOptics Express
Volume20
Issue number20
DOIs
StatePublished - Sep 24 2012

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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    Ravikumar, A. P., Alfaro-Martinez, A., Chen, G., Zhao, K., Tamargo, M. C., Gmachl, C. F., & Shen, A. (2012). ZnCdSe/ZnCdMgSe quantum well infrared photodetector. Optics Express, 20(20), 22391-22397. https://doi.org/10.1364/OE.20.022391