X-ray standing-wave investigations of valence electronic structure

J. C. Woicik, E. J. Nelson, D. Heskett, J. Warner, L. E. Berman, B. A. Karlin, I. A. Vartanyants, M. Z. Hasan, T. Kendelewicz, Z. X. Shen, P. Pianetta

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We have examined the valence-electron emission from Cu, Ge, GaAs, InP, and NiO single crystals under the condition of strong x-ray Bragg reflection; i.e., in the presence of the spatially modulated x-ray standing-wave interference field that is produced by the superposition of the incident and reflected x-ray beams. These crystals span the entire metallic, covalent, and ionic range of solid-state bonding. It is demonstrated that the valence-electron emission is closely coupled to the atomic cores, even for electron states close to a metallic Fermi edge. Using the bond-orbital approximation, the x-ray standing-wave structure factor for valence-electron emission is derived in terms of the bond polarities and photoionization cross sections of the atoms within the crystalline unit cell and compared to experiment. Additionally, we demonstrated that by exploiting the spatial dependence of the electric-field intensity under Bragg condition, site specific valence electronic structure may be obtained. The technique is demonstrated for GaAs and NiO.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number12
DOIs
StatePublished - 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'X-ray standing-wave investigations of valence electronic structure'. Together they form a unique fingerprint.

Cite this