Metal-oxide-semiconductor field-effect transistors (MOSFETs) with a wire-channel and wrap-around-gate (WW) structure were fabricated using electron beam lithography and reactive ion etching. The smallest devices have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm channel length. Measurements showed that as the channel width of WW MOSFETs decreased from 75 to 35 nm short channel effects were significantly reduced: the subthreshold slope decreased from 356 to 80 mV/dec and the drain-induced barrier lowering decreased from 988 to 129 mV. Furthermore, the reduction of channel width increases the drive current per unit channel width. A multichannel WW MOSFET with a high current driving capability is discussed.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 1997|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering