Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0

Jongsoo Yoon; C. C. Li; D. Shahar; D. C. Tsui; M. Shayegan

doi:10.1103/PhysRevLett.82.1744

Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0

Jongsoo Yoon
, C. C. Li
, D. Shahar
, D. C. Tsui
, M. Shayegan

Research output: Contribution to journal › Article › peer-review

191 Scopus citations

Abstract

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 10⁵ cm²/Vs, with a hole density of 4.8 × 10⁹ < p < 3.72 × 10¹⁰cm^-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at r_s = 35.1 ± 0.9, which is in good agreement with the critical r_s for Wigner crystallization r^c_s = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.

Original language	English (US)
Pages (from-to)	1744-1747
Number of pages	4
Journal	Physical review letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.82.1744
State	Published - 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.82.1744

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title = "Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0",

abstract = "We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.",

author = "Jongsoo Yoon and Li, \{C. C.\} and D. Shahar and Tsui, \{D. C.\} and M. Shayegan",

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T1 - Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0

AU - Yoon, Jongsoo

AU - Li, C. C.

AU - Shahar, D.

AU - Tsui, D. C.

AU - Shayegan, M.

PY - 1999

Y1 - 1999

N2 - We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.

AB - We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.

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DO - 10.1103/PhysRevLett.82.1744

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EP - 1747

JO - Physical review letters

JF - Physical review letters

IS - 8

ER -

Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0

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