Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0

Jongsoo Yoon, C. C. Li, D. Shahar, D. C. Tsui, M. Shayegan

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Abstract

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.

Original languageEnglish (US)
Pages (from-to)1744-1747
Number of pages4
JournalPhysical review letters
Volume82
Issue number8
DOIs
StatePublished - 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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