TY - JOUR
T1 - Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs at B = 0
AU - Yoon, Jongsoo
AU - Li, C. C.
AU - Shahar, D.
AU - Tsui, D. C.
AU - Shayegan, M.
PY - 1999
Y1 - 1999
N2 - We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.
AB - We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7 × 105 cm2/Vs, with a hole density of 4.8 × 109 < p < 3.72 × 1010cm-2 in the temperature range of 50mK < T < 1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at rs = 35.1 ± 0.9, which is in good agreement with the critical rs for Wigner crystallization rcs = 37 ± 0.9, predicted by Tanatar and Ceperley for an ideally clean 2D system.
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U2 - 10.1103/PhysRevLett.82.1744
DO - 10.1103/PhysRevLett.82.1744
M3 - Article
AN - SCOPUS:0000884403
SN - 0031-9007
VL - 82
SP - 1744
EP - 1747
JO - Physical review letters
JF - Physical review letters
IS - 8
ER -