Wide bandgap heterojunctions on crystalline silicon

J. C. Sturm, S. Avasthi, K. Nagamatsu, J. Jhaveri, W. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device structures as well as a photovoltaic application. In both cases, the ability to deposit layers at low-temperature (< 100 °C) is attractive for low-cost applications. The ability of organic molecules to passivate silicon surface states is also presented.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Number of pages9
ISBN (Electronic)9781607684541
StatePublished - 2013

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • General Engineering


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