Wide bandgap heterojunctions on crystalline silicon

J. C. Sturm, S. Avasthi, K. Nagamatsu, J. Jhaveri, W. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device structures as well as a photovoltaic application. In both cases, the ability to deposit layers at low-temperature (< 100 °C) is attractive for low-cost applications. The ability of organic molecules to passivate silicon surface states is also presented.

Original languageEnglish (US)
Pages (from-to)97-105
Number of pages9
JournalECS Transactions
Volume58
Issue number9
DOIs
StatePublished - 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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