Abstract

We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device structures as well as a photovoltaic application. In both cases, the ability to deposit layers at low-temperature (< 100 °C) is attractive for low-cost applications. The ability of organic molecules to passivate silicon surface states is also presented.

Original languageEnglish (US)
Pages (from-to)97-105
Number of pages9
JournalECS Transactions
Volume58
Issue number9
DOIs
StatePublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sturm, J. C., Avasthi, S., Nagamatsu, K., Jhaveri, J., McClain, W., Man, G., Kahn, A., Schwartz, J., & Wagner, S. (2013). Wide bandgap heterojunctions on crystalline silicon. ECS Transactions, 58(9), 97-105. https://doi.org/10.1149/05809.0097ecst