Wide band gap II-VI selenides for short wavelength intersubband devices

A. Shen, W. O. Charles, B. S. Li, K. J. Franz, Claire F. Gmachl, Q. Zhang, M. C. Tamargo

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 μm was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 μm range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 μm may be achieved.

Original languageEnglish (US)
Pages (from-to)2109-2112
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
StatePublished - Mar 15 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A3. Molecular beam epitaxy
  • B1. MgSe
  • B1. ZnCdMgSe
  • B1. ZnCdSe
  • B2. Semiconducting II-VI materials
  • B3. Infrared devices

Fingerprint Dive into the research topics of 'Wide band gap II-VI selenides for short wavelength intersubband devices'. Together they form a unique fingerprint.

  • Cite this

    Shen, A., Charles, W. O., Li, B. S., Franz, K. J., Gmachl, C. F., Zhang, Q., & Tamargo, M. C. (2009). Wide band gap II-VI selenides for short wavelength intersubband devices. Journal of Crystal Growth, 311(7), 2109-2112. https://doi.org/10.1016/j.jcrysgro.2008.10.102