Wide band gap II-VI selenides for short wavelength intersubband devices

A. Shen; W. O. Charles; B. S. Li; K. J. Franz; Claire F. Gmachl; Q. Zhang; M. C. Tamargo

doi:10.1016/j.jcrysgro.2008.10.102

Wide band gap II-VI selenides for short wavelength intersubband devices

A. Shen, W. O. Charles, B. S. Li, K. J. Franz, Claire F. Gmachl, Q. Zhang, M. C. Tamargo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 μm was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 μm range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 μm may be achieved.

Original language	English (US)
Pages (from-to)	2109-2112
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.10.102
State	Published - Mar 15 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Molecular beam epitaxy
B1. MgSe
B1. ZnCdMgSe
B1. ZnCdSe
B2. Semiconducting II-VI materials
B3. Infrared devices

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10.1016/j.jcrysgro.2008.10.102

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@article{ce7cb8c4341442c2948ed17a2ace12c9,

title = "Wide band gap II-VI selenides for short wavelength intersubband devices",

abstract = "In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 μm was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 μm range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 μm may be achieved.",

keywords = "A3. Molecular beam epitaxy, B1. MgSe, B1. ZnCdMgSe, B1. ZnCdSe, B2. Semiconducting II-VI materials, B3. Infrared devices",

author = "A. Shen and Charles, {W. O.} and Li, {B. S.} and Franz, {K. J.} and Gmachl, {Claire F.} and Q. Zhang and Tamargo, {M. C.}",

note = "Funding Information: This work is supported in part by MIRTHE (NSF-ERC # EEC-0540832) and PSC-CUNY Research Award (# 61401-0039).",

year = "2009",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2008.10.102",

language = "English (US)",

volume = "311",

pages = "2109--2112",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "7",

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TY - JOUR

T1 - Wide band gap II-VI selenides for short wavelength intersubband devices

AU - Shen, A.

AU - Charles, W. O.

AU - Li, B. S.

AU - Franz, K. J.

AU - Gmachl, Claire F.

AU - Zhang, Q.

AU - Tamargo, M. C.

N1 - Funding Information: This work is supported in part by MIRTHE (NSF-ERC # EEC-0540832) and PSC-CUNY Research Award (# 61401-0039).

PY - 2009/3/15

Y1 - 2009/3/15

N2 - In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 μm was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 μm range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 μm may be achieved.

AB - In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 μm was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 μm range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 μm may be achieved.

KW - A3. Molecular beam epitaxy

KW - B1. MgSe

KW - B1. ZnCdMgSe

KW - B1. ZnCdSe

KW - B2. Semiconducting II-VI materials

KW - B3. Infrared devices

UR - http://www.scopus.com/inward/record.url?scp=63349089528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63349089528&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.10.102

DO - 10.1016/j.jcrysgro.2008.10.102

M3 - Article

AN - SCOPUS:63349089528

SN - 0022-0248

VL - 311

SP - 2109

EP - 2112

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

Wide band gap II-VI selenides for short wavelength intersubband devices

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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