TY - JOUR
T1 - Weyl semimetal phases and intrinsic spin-Hall conductivity in SbAs ordered alloys
AU - Zubair, Muhammad
AU - Ho, Dai Q.
AU - To, Duy Quang
AU - Khalid, Shoaib
AU - Janotti, Anderson
N1 - Publisher Copyright:
© 2025 American Physical Society.
PY - 2025/4
Y1 - 2025/4
N2 - Using density functional theory calculations, we investigated possible Weyl semimetal (WSM) phases in antimony arsenide ordered alloys Sb1-xAsx (x=0,1/6,1/3,1/2,2/3,5/6,1). We find WSM phases for all As compositions of Sb1-xAsx with broken inversion symmetry, in contrast to Bi1-xSbx where only compositions x=1/2 and 5/6 were predicted to exhibit WSM phases. The WSM phases in Sb1-xAsx are characterized by the presence of 12 Weyl points, located within 55 meV from the Fermi level in the case of x=1/2. The robust spin-orbit coupling strength and Berry curvature in these alloys produce large spin-Hall conductivity in the range of 176-602 (/e)(S/cm), comparable to that in the BiSb alloys. Finally, Sb0.5As0.5 is predicted to be almost lattice matched to GaAs(111), with the Fermi level within the gap of the semiconductor, facilitating growth and characterization, and thus, offering promising integration with conventional semiconductors.
AB - Using density functional theory calculations, we investigated possible Weyl semimetal (WSM) phases in antimony arsenide ordered alloys Sb1-xAsx (x=0,1/6,1/3,1/2,2/3,5/6,1). We find WSM phases for all As compositions of Sb1-xAsx with broken inversion symmetry, in contrast to Bi1-xSbx where only compositions x=1/2 and 5/6 were predicted to exhibit WSM phases. The WSM phases in Sb1-xAsx are characterized by the presence of 12 Weyl points, located within 55 meV from the Fermi level in the case of x=1/2. The robust spin-orbit coupling strength and Berry curvature in these alloys produce large spin-Hall conductivity in the range of 176-602 (/e)(S/cm), comparable to that in the BiSb alloys. Finally, Sb0.5As0.5 is predicted to be almost lattice matched to GaAs(111), with the Fermi level within the gap of the semiconductor, facilitating growth and characterization, and thus, offering promising integration with conventional semiconductors.
UR - https://www.scopus.com/pages/publications/105003639487
UR - https://www.scopus.com/inward/citedby.url?scp=105003639487&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.9.045001
DO - 10.1103/PhysRevMaterials.9.045001
M3 - Article
AN - SCOPUS:105003639487
SN - 2475-9953
VL - 9
JO - Physical Review Materials
JF - Physical Review Materials
IS - 4
M1 - 045001
ER -