Wet chemical cleaning of germanium surfaces for growth of high-k dielectrics

Sandrine Rivillon Amy, Yves J. Chabal, Fabrice Amy, Antoine Kahn, Cristiano Krugg, Paul Kirsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

One of the major difficulties preventing the wide use of germanium (epi or bulk) as a semiconductor material for gate stack devices is the poor stability of its oxide, leading to reproducibility and reliability issues. In contrast to silicon, the nature and thickness of Ge "native" oxides are history dependent, and most phases of germanium oxide are water-soluble, As a result, the procedures for passivating Ge surfaces with hydrogen (HF last) are more complex and less forgiving. We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to investigate the nature of oxidized and H-terminated Ge surfaces. The GeO2, GeO and GeC phases have been identified and quantified as a function of processing conditions. The stability of the H-terminated surfaces has been examined in air and in controlled environments. The H-passivated Ge surfaces are found to be much less stable in air than H-terminated Si surfaces.

Original languageEnglish (US)
Title of host publicationGate Stack Scaling
Subtitle of host publicationMaterials Selection, Role of Interfaces, and Reliability Implications
Pages8-17
Number of pages10
StatePublished - Dec 1 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume917
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Amy, S. R., Chabal, Y. J., Amy, F., Kahn, A., Krugg, C., & Kirsch, P. (2006). Wet chemical cleaning of germanium surfaces for growth of high-k dielectrics. In Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications (pp. 8-17). (Materials Research Society Symposium Proceedings; Vol. 917).