Abstract
We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. At liquid-He temperatures the photoluminescence is due to shallow bound excitons, and in addition to a no-phonon line, phonon-assisted transitions involving TA phonons and Si-Si, Si-Ge, and Ge-Ge TO phonons are observed At higher temperatures the spectra are dominated by free-exciton luminescence. Quantum-confinement effects shift the observed free-exciton edge above the bulk strained band-gap energy, and also influence the relative intensities of the three TO-phonon replicas.
Original language | English (US) |
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Pages (from-to) | 1362-1365 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 66 |
Issue number | 10 |
DOIs | |
State | Published - 1991 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy