Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells

J. C. Sturm, H. Manoharan, L. C. Lenchyshyn, M. L.W. Thewalt, N. L. Rowell, J. P. Noël, D. C. Houghton

Research output: Contribution to journalArticle

266 Scopus citations

Abstract

We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. At liquid-He temperatures the photoluminescence is due to shallow bound excitons, and in addition to a no-phonon line, phonon-assisted transitions involving TA phonons and Si-Si, Si-Ge, and Ge-Ge TO phonons are observed At higher temperatures the spectra are dominated by free-exciton luminescence. Quantum-confinement effects shift the observed free-exciton edge above the bulk strained band-gap energy, and also influence the relative intensities of the three TO-phonon replicas.

Original languageEnglish (US)
Pages (from-to)1362-1365
Number of pages4
JournalPhysical review letters
Volume66
Issue number10
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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