Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGex quantum wells and superlattices

J. C. Sturm; Q. Mi; H. Manoharan; X. Xiao; P. V. Schwartz

doi:10.7567/ssdm.1991.a-4-5

Well-resolved band-edge photo- and electro-luminescence in strained Si_1-xGe_x quantum wells and superlattices

J. C. Sturm
, Q. Mi
, H. Manoharan
, X. Xiao
, P. V. Schwartz

Research output: Contribution to conference › Paper › peer-review

Abstract

Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si_1-xGe_x quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.

Original language	English (US)
Pages	150-152
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.a-4-5
State	Published - 1991
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	8/27/91 → 8/29/91

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.7567/ssdm.1991.a-4-5

Cite this

@conference{daf8c76a7e5f47e2a4f826cf0e06644b,

title = "Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGex quantum wells and superlattices",

abstract = "Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si1-xGex quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.",

author = "Sturm, \{J. C.\} and Q. Mi and H. Manoharan and X. Xiao and Schwartz, \{P. V.\}",

year = "1991",

doi = "10.7567/ssdm.1991.a-4-5",

language = "English (US)",

pages = "150--152",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGex quantum wells and superlattices

AU - Sturm, J. C.

AU - Mi, Q.

AU - Manoharan, H.

AU - Xiao, X.

AU - Schwartz, P. V.

PY - 1991

Y1 - 1991

N2 - Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si1-xGex quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.

AB - Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si1-xGex quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.

UR - https://www.scopus.com/pages/publications/0025789536

UR - https://www.scopus.com/pages/publications/0025789536#tab=citedBy

U2 - 10.7567/ssdm.1991.a-4-5

DO - 10.7567/ssdm.1991.a-4-5

M3 - Paper

AN - SCOPUS:0025789536

SP - 150

EP - 152

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -