Abstract
Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si1-xGex quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.
Original language | English (US) |
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Pages | 150-152 |
Number of pages | 3 |
DOIs | |
State | Published - 1991 |
Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991 |
Other
Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
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City | Yokohama, Jpn |
Period | 8/27/91 → 8/29/91 |
All Science Journal Classification (ASJC) codes
- General Engineering