Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGex quantum wells and superlattices

J. C. Sturm, Q. Mi, H. Manoharan, X. Xiao, P. V. Schwartz

Research output: Contribution to conferencePaper

Abstract

Well-resolved band-edge photoluminescence and electroluminescence of excitons in strained Si1-xGex quantum wells and superlattices on silicon with a germanium fraction up to x=0.4 are reported. A characteristic no-phonon line due to alloy scattering dominates the emission process and allows an accurate determination of the bandgap. CW electro-luminescence has been observed for junction temperatures up to 300K.

Original languageEnglish (US)
Pages150-152
Number of pages3
DOIs
StatePublished - Jan 1 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: Aug 27 1991Aug 29 1991

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period8/27/918/29/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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