Wannier-Stark effect in superlattices

C. Hamaguchi, M. Yamaguchi, M. Morifuji, H. Kubo, K. Taniguchi, Claire F. Gmachl, E. Gornik

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Abstract

Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs (40 AA)/AlGaAs (20 AA) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding theory. The observed electroreflectance spectra over a wide range of photon energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in a higher photon energy region (1.4-2.2 eV) indicate the existence of a transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. Resonant coupling between the localized states is also observed.

Original languageEnglish (US)
Article number023
Pages (from-to)1994-1998
Number of pages5
JournalSemiconductor Science and Technology
Volume9
Issue number11 S
DOIs
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hamaguchi, C., Yamaguchi, M., Morifuji, M., Kubo, H., Taniguchi, K., Gmachl, C. F., & Gornik, E. (1994). Wannier-Stark effect in superlattices. Semiconductor Science and Technology, 9(11 S), 1994-1998. [023]. https://doi.org/10.1088/0268-1242/9/11S/023