Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching

Keith J. Morton, Gregory Nieberg, Shufeng Bai, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

165 Scopus citations

Abstract

We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 μm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm square lattice with long range order. The conventional DRIE etching process was modified and optimized with reduced cycle times and gas flows to achieve vertical sidewalls; with such techniques the pillar sidewall roughness can be reduced below 8 nm (peak-to-peak). In some cases, sub-50 nm diameter pillars, 3 μm tall, were fabricated to achieve aspect ratios greater than 60:1.

Original languageEnglish (US)
Article number345301
JournalNanotechnology
Volume19
Issue number34
DOIs
StatePublished - Aug 27 2008

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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