Visualizing critical correlations near the metal-insulator transition in Ga1-xMnxAs

Anthony Richardella, Pedram Roushan, Shawn Mack, Brian Zhou, David A. Huse, David D. Awschalom, Ali Yazdani

Research output: Contribution to journalArticlepeer-review

218 Scopus citations


Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase transition. We used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics.

Original languageEnglish (US)
Pages (from-to)665-669
Number of pages5
Issue number5966
StatePublished - Feb 5 2010

All Science Journal Classification (ASJC) codes

  • General


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