Visible photoluminescence from Si1-xGex quantum wells

T. W. Steiner, L. C. Lenchyshyn, M. L.W. Thewalt, D. C. Houghton, J. P. Noel, N. L. Rowell, J. C. Sturm, X. Xiao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We have observed photoluminescence from strained SiGe quantum well layers at energies approximately equal to twice the SiGe band-gap energy. This luminescence is caused by the simultaneous recombination of two electron hole pairs yielding a single photon. Detection of luminescence at twice the band-gap has been previously used in Si to observe luminescence originating from electron-hole droplets, biexcitons, bound multiexciton complexes and polyexcitons. Time resolved spectra at twice the band-gap have been obtained from our SiGe samples prepared by molecular beam epitaxy (MBE) as well as rapid thermal chemical vapor deposition (RTCVD). This new luminescence clearly distinguishes multiexciton or dense e-h plasma processes from single exciton processes such as bound excitons, free excitons or localized excitons, which are difficult to separate in the usual near-infrared luminescence.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages5
ISBN (Print)1558991948, 9781558991941
StatePublished - 1993
Externally publishedYes
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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