VIB-7 Room-Temperature 1.3-and 1.5-µm Electro-luminescence from Si/Si1−xGex Quantum Wells

VIB-7 Room-Temperature 1.3-and 1.5-µm Electro-luminescence from Si/Si_1−xGe_x Quantum Wells

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/16.163554
State	Published - Nov 1992

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title = "VIB-7 Room-Temperature 1.3-and 1.5-µm Electro-luminescence from Si/Si1−xGex Quantum Wells",

author = "Q. Mi and X. Xiao and Sturm, \{J. C.\} and Lenchyshyn, \{L. C.\} and Thewalt, \{M. L.W.\}",

year = "1992",

month = nov,

doi = "10.1109/16.163554",

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volume = "39",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - VIB-7 Room-Temperature 1.3-and 1.5-µm Electro-luminescence from Si/Si1−xGex Quantum Wells

AU - Mi, Q.

AU - Xiao, X.

AU - Sturm, J. C.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

PY - 1992/11

Y1 - 1992/11

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DO - 10.1109/16.163554

M3 - Article

SN - 0018-9383

VL - 39

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -