VI 3 —a New Layered Ferromagnetic Semiconductor

Tai Kong, Karoline Stolze, Erik I. Timmons, Jing Tao, Danrui Ni, Shu Guo, Zoë Yang, Ruslan Prozorov, Robert J. Cava

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

2D materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI 3 , which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI 3 -type structure (R 3 , No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI 3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

Original languageEnglish (US)
Article number1808074
JournalAdvanced Materials
Volume31
Issue number17
DOIs
StatePublished - Apr 25 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • 2D material
  • ferromagnetic
  • semiconductor
  • van der Waals

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    Kong, T., Stolze, K., Timmons, E. I., Tao, J., Ni, D., Guo, S., Yang, Z., Prozorov, R., & Cava, R. J. (2019). VI 3 —a New Layered Ferromagnetic Semiconductor Advanced Materials, 31(17), [1808074]. https://doi.org/10.1002/adma.201808074