Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers

Chiao Ti Huang, Jiun Yun Li, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We report the lowest electron density (4.9×1010 cm -2 and 1.1×1011 cm-2) and high mobility (∼400,000 cm2/Vs and ∼200,000 cm2/Vs) of undoped enhancement-mode Si/SiGe two-dimensional electron gases comparing to samples previously reported with similar thin SiGe cap thickness (55nm and 27nm). The dominant scattering mechanism over a wide range of two-dimensional electron density in both samples is the scattering from remote charges at oxide/silicon interface. In addition, a clear metal-insulator transition is observed in the sample with a 27-nm SiGe cap.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
Pages45-50
Number of pages6
Edition3
DOIs
StatePublished - Oct 21 2013
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 17 2013

Publication series

NameECS Transactions
Number3
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/17/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Huang, C. T., Li, J. Y., & Sturm, J. C. (2013). Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 (3 ed., pp. 45-50). (ECS Transactions; Vol. 53, No. 3). https://doi.org/10.1149/05303.0045ecst