@inproceedings{9f60ad2d99584d1a9fdbde0e1de89357,
title = "Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers",
abstract = "We report the lowest electron density (4.9×1010 cm -2 and 1.1×1011 cm-2) and high mobility (∼400,000 cm2/Vs and ∼200,000 cm2/Vs) of undoped enhancement-mode Si/SiGe two-dimensional electron gases comparing to samples previously reported with similar thin SiGe cap thickness (55nm and 27nm). The dominant scattering mechanism over a wide range of two-dimensional electron density in both samples is the scattering from remote charges at oxide/silicon interface. In addition, a clear metal-insulator transition is observed in the sample with a 27-nm SiGe cap.",
author = "Huang, {Chiao Ti} and Li, {Jiun Yun} and Sturm, {James C.}",
year = "2013",
doi = "10.1149/05303.0045ecst",
language = "English (US)",
isbn = "9781607683766",
series = "ECS Transactions",
number = "3",
pages = "45--50",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3",
edition = "3",
note = "International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting ; Conference date: 12-05-2013 Through 17-05-2013",
}