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Vertical field-effect transistor based on wave-function extension
A. Sciambi
, M. Pelliccione
, M. P. Lilly
, S. R. Bank
, A. C. Gossard
,
L. N. Pfeiffer
, K. W. West
, D. Goldhaber-Gordon
Research output
:
Contribution to journal
›
Article
›
peer-review
27
Scopus citations
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Engineering
Field-Effect Transistor
100%
Graphene
50%
Gallium Arsenide
50%
Material System
50%
Aluminium Gallium Arsenide
50%
Cryogenic Temperature
50%
Material Science
Field Effect Transistor
100%
Aluminium Gallium Arsenide
50%
Gallium Arsenide
50%
Graphene
50%
Earth and Planetary Sciences
Wave Function
100%
Graphene
50%
Aluminum Gallium Arsenide
50%
Cryogenic Temperature
50%
Keyphrases
Vertical Field Effect Transistor
100%
Medicine and Dentistry
Graphene
100%