Vertical field-effect transistor based on wave-function extension

A. Sciambi; M. Pelliccione; M. P. Lilly; S. R. Bank; A. C. Gossard; L. N. Pfeiffer; K. W. West; D. Goldhaber-Gordon

doi:10.1103/PhysRevB.84.085301

Vertical field-effect transistor based on wave-function extension

A. Sciambi
, M. Pelliccione
, M. P. Lilly
, S. R. Bank
, A. C. Gossard
, L. N. Pfeiffer
, K. W. West
, D. Goldhaber-Gordon

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

Original language	English (US)
Article number	085301
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.84.085301
State	Published - Aug 18 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.085301

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abstract = "We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.",

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AU - Sciambi, A.

AU - Pelliccione, M.

AU - Lilly, M. P.

AU - Bank, S. R.

AU - Gossard, A. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Goldhaber-Gordon, D.

PY - 2011/8/18

Y1 - 2011/8/18

N2 - We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

AB - We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

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UR - https://www.scopus.com/pages/publications/80052515850#tab=citedBy

U2 - 10.1103/PhysRevB.84.085301

DO - 10.1103/PhysRevB.84.085301

M3 - Article

AN - SCOPUS:80052515850

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JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

M1 - 085301

ER -

Vertical field-effect transistor based on wave-function extension

Abstract

All Science Journal Classification (ASJC) codes

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