Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon

J. C. Sturm; J. F. Gibbons

doi:10.1109/EDL.1985.26169

Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon

J. C. Sturm, J. F. Gibbons

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Abstract

Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.

Original language	English (US)
Pages (from-to)	400-402
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	6
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1985.26169
State	Published - Aug 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1985.26169

Cite this

@article{98fe4a257bb941d6a0d41f0141502750,

title = "Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon",

abstract = "Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.",

author = "Sturm, {J. C.} and Gibbons, {J. F.}",

year = "1985",

month = aug,

doi = "10.1109/EDL.1985.26169",

language = "English (US)",

volume = "6",

pages = "400--402",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon

AU - Sturm, J. C.

AU - Gibbons, J. F.

PY - 1985/8

Y1 - 1985/8

N2 - Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.

AB - Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.

UR - http://www.scopus.com/inward/record.url?scp=0022106094&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022106094&partnerID=8YFLogxK

U2 - 10.1109/EDL.1985.26169

DO - 10.1109/EDL.1985.26169

M3 - Article

AN - SCOPUS:0022106094

SN - 0741-3106

VL - 6

SP - 400

EP - 402

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon

Abstract

All Science Journal Classification (ASJC) codes

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