Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jan 1 1985|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering