Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon

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Vertical bipolar n-p-n transistors with a base width of 0.2 μm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.

Original languageEnglish (US)
Pages (from-to)400-402
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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