Vertical 1.3μm optical modulator in silicon-on-insulator

X. Xiao, J. C. Sturm, P. V. Schwartz, K. K. Goel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

There have been some efforts trying to make active optoelectronic devices, including modulators and switches, on silicon substrates using free-carrier effects[l-2]. Here we report a new optical intensity modulator at 1.3μm which utilizes a Fabry-Perot resonant cavity made possible by silicon-on-insulator technology to achieve a high modulation depth.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages171-172
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period10/2/9010/4/90

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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