@inproceedings{b2d48a3b98094f9f9c8a3cdb0a42b79d,
title = "Vertical 1.3μm optical modulator in silicon-on-insulator",
abstract = "There have been some efforts trying to make active optoelectronic devices, including modulators and switches, on silicon substrates using free-carrier effects[l-2]. Here we report a new optical intensity modulator at 1.3μm which utilizes a Fabry-Perot resonant cavity made possible by silicon-on-insulator technology to achieve a high modulation depth.",
author = "X. Xiao and Sturm, {J. C.} and Schwartz, {P. V.} and Goel, {K. K.}",
year = "1990",
month = jan,
day = "1",
doi = "10.1109/SOSSOI.1990.145767",
language = "English (US)",
series = "1990 IEEE SOS/SOI Technology Conference, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "171--172",
booktitle = "1990 IEEE SOS/SOI Technology Conference, Proceedings",
address = "United States",
note = "1990 IEEE SOS/SOI Technology Conference ; Conference date: 02-10-1990 Through 04-10-1990",
}