VB-2 A Three-Dimensional Merged Vertical Bipolar-MOS Device in Recrystallized Silicon

Research output: Contribution to journalArticle

Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume32
Issue number11
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'VB-2 A Three-Dimensional Merged Vertical Bipolar-MOS Device in Recrystallized Silicon'. Together they form a unique fingerprint.

  • Cite this