VB-2 A Three-Dimensional Merged Vertical Bipolar-MOS Device in Recrystallized Silicon

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2548
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1985.22364
State	Published - Nov 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

@article{82093a1477034ace83c35414d6d7dbe8,

title = "VB-2 A Three-Dimensional Merged Vertical Bipolar-MOS Device in Recrystallized Silicon",

author = "Sturm, {J. C.} and Gibbons, {J. F.}",

year = "1985",

month = nov,

doi = "10.1109/T-ED.1985.22364",

language = "English (US)",

volume = "32",

pages = "2548",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - VB-2 A Three-Dimensional Merged Vertical Bipolar-MOS Device in Recrystallized Silicon

AU - Sturm, J. C.

AU - Gibbons, J. F.

PY - 1985/11

Y1 - 1985/11

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U2 - 10.1109/T-ED.1985.22364

DO - 10.1109/T-ED.1985.22364

M3 - Article

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SN - 0018-9383

VL - 32

SP - 2548

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -