Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure

B. E. Kane; L. N. Pfeiffer; K. W. West; C. K. Harnett

doi:10.1063/1.110563

Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/Al_xGa_1-xAs heterostructure

B. E. Kane
, L. N. Pfeiffer
, K. W. West
, C. K. Harnett

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

We have fabricated undoped GaAs/Al_xGa_1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n_2D < 10¹⁰/cm ² to n_2D ≳ 5 × 10¹¹/cm² are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

Original language	English (US)
Pages (from-to)	2132-2134
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	15
DOIs	https://doi.org/10.1063/1.110563
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.110563

Cite this

@article{caa7799a78124651be785d85cd355b37,

title = "Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure",

abstract = "We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.",

author = "Kane, \{B. E.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\} and Harnett, \{C. K.\}",

year = "1993",

doi = "10.1063/1.110563",

language = "English (US)",

volume = "63",

pages = "2132--2134",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure

AU - Kane, B. E.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Harnett, C. K.

PY - 1993

Y1 - 1993

N2 - We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

AB - We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

UR - https://www.scopus.com/pages/publications/0001138559

UR - https://www.scopus.com/pages/publications/0001138559#tab=citedBy

U2 - 10.1063/1.110563

DO - 10.1063/1.110563

M3 - Article

AN - SCOPUS:0001138559

SN - 0003-6951

VL - 63

SP - 2132

EP - 2134

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/Al_xGa_1-xAs heterostructure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this