Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure

B. E. Kane; L. N. Pfeiffer; K. W. West; C. K. Harnett

doi:10.1063/1.110563

Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/Al_xGa_1-xAs heterostructure

B. E. Kane, L. N. Pfeiffer, K. W. West, C. K. Harnett

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

We have fabricated undoped GaAs/Al_xGa_1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n_2D < 10¹⁰/cm ² to n_2D ≳ 5 × 10¹¹/cm² are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

Original language	English (US)
Pages (from-to)	2132-2134
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	15
DOIs	https://doi.org/10.1063/1.110563
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110563

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title = "Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure",

abstract = "We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.",

author = "Kane, {B. E.} and Pfeiffer, {L. N.} and West, {K. W.} and Harnett, {C. K.}",

year = "1993",

doi = "10.1063/1.110563",

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pages = "2132--2134",

journal = "Applied Physics Letters",

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T1 - Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1-xAs heterostructure

AU - Kane, B. E.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Harnett, C. K.

PY - 1993

Y1 - 1993

N2 - We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

AB - We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm 2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

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JF - Applied Physics Letters

IS - 15

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Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/Al_xGa_1-xAs heterostructure

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