Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

Takao Someya; Howard E. Katz; Alan Gelperin; Andrew J. Lovinger; Ananth Dodabalapur

doi:10.1063/1.1514826

Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

Takao Someya, Howard E. Katz, Alan Gelperin, Andrew J. Lovinger, Ananth Dodabalapur

Princeton Neuroscience Institute

Research output: Contribution to journal › Article › peer-review

142 Scopus citations

Abstract

We have investigated the channel-length dependence of responses to a vapor analyte with a series of α,ω-dihexylquarterthiophene (DHα4T) field-effect transistors (FETs). Single-crystalline DHα4T devices deposited by vacuum sublimation at substrate temperatures of 70°C are compared with polycrystalline DHα4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries.

Original language	English (US)
Pages (from-to)	3079-3081
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	16
DOIs	https://doi.org/10.1063/1.1514826
State	Published - Oct 14 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1514826

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abstract = "We have investigated the channel-length dependence of responses to a vapor analyte with a series of α,ω-dihexylquarterthiophene (DHα4T) field-effect transistors (FETs). Single-crystalline DHα4T devices deposited by vacuum sublimation at substrate temperatures of 70°C are compared with polycrystalline DHα4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries.",

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AU - Lovinger, Andrew J.

AU - Dodabalapur, Ananth

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AB - We have investigated the channel-length dependence of responses to a vapor analyte with a series of α,ω-dihexylquarterthiophene (DHα4T) field-effect transistors (FETs). Single-crystalline DHα4T devices deposited by vacuum sublimation at substrate temperatures of 70°C are compared with polycrystalline DHα4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries.

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Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

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