Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

Takao Someya, Howard E. Katz, Alan Gelperin, Andrew J. Lovinger, Ananth Dodabalapur

Research output: Contribution to journalArticle

132 Scopus citations

Abstract

We have investigated the channel-length dependence of responses to a vapor analyte with a series of α,ω-dihexylquarterthiophene (DHα4T) field-effect transistors (FETs). Single-crystalline DHα4T devices deposited by vacuum sublimation at substrate temperatures of 70°C are compared with polycrystalline DHα4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries.

Original languageEnglish (US)
Pages (from-to)3079-3081
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
StatePublished - Oct 14 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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