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Valley susceptibility of interacting electrons and composite fermions
N. C. Bishop
, M. Padmanabhan
, O. Gunawan
, T. Gokmen
, E. P. De Poortere
, Y. P. Shkolnikov
, E. Tutuc
, K. Vakili
,
M. Shayegan
Electrical and Computer Engineering
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Scopus citations
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Keyphrases
Interacting Electrons
100%
Composite Fermions
100%
Symmetry Breaking
50%
Fractional Quantum Hall Effect
50%
Magnetotransport Measurements
50%
Conduction Band
50%
Quantum Well
50%
Valley Degree of Freedom
50%
Strong Interaction
50%
Level Crossing
50%
Breaking Strain
50%
Spin Susceptibility
50%
Engineering
Degree of Freedom
100%
Quantum Well
100%
Conduction Band
100%
Strong Interaction
100%
Earth and Planetary Sciences
Degree of Freedom
100%
Conduction Band
100%
Quantum Wells
100%
Broken Symmetry
100%
Material Science
Quantum Well
100%