Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields

K. Lai, T. M. Lu, W. Pan, D. C. Tsui, S. Lyon, J. Liu, Y. H. Xie, M. Mühlberger, F. Schäffler

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

We have investigated the valley splitting of two-dimensional electrons in high-quality Si Si1-x Gex heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor ν=3 (Δ3) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear dependence of Δ3 on the electron density was observed, while the slope of these two configurations differs by more than a factor of 2. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of Δ3 before and after the coincidence.

Original languageEnglish (US)
Article number161301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number16
DOIs
StatePublished - Apr 13 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields'. Together they form a unique fingerprint.

  • Cite this

    Lai, K., Lu, T. M., Pan, W., Tsui, D. C., Lyon, S., Liu, J., Xie, Y. H., Mühlberger, M., & Schäffler, F. (2006). Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields. Physical Review B - Condensed Matter and Materials Physics, 73(16), [161301]. https://doi.org/10.1103/PhysRevB.73.161301