Vacuum beam studies of photoresist etching kinetics

Frank Greer, J. W. Coburn, David B. Graves

Research output: Contribution to journalConference articlepeer-review

18 Scopus citations


The interaction of fluorine atoms and hydrogen atoms on the photoresist (PR) surface was studied by simplifying the complex surface chemistry of fluorocarbon plasmas. The chemistry was modeled in the vacuum beam interactions to understand the plasma-(PR) surface interactions. The argon ions and independent fluxes of neutral deuterium and fluorine atoms intersected at the photoresist sample. Etch yield of PR was high under these conditions. The experiment was done by reducing the fluorine to carbon ratio in the plasma and more specifically at the PR surface itself.

Original languageEnglish (US)
Pages (from-to)2288-2294
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number5
StatePublished - Sep 2000
Externally publishedYes
Event47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA
Duration: Oct 2 2000Oct 6 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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