Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO 2 surfaces

Yoshie Kimura; J. W. Coburn; David B. Graves

doi:10.1116/1.1810166

Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO ₂ surfaces

Yoshie Kimura, J. W. Coburn, David B. Graves

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The use of fluorocarbon plasmas in semiconductors, thin film deposition and etching of Si and SiO ₂ was analyzed. Investigations show that the molecules dissociatively adsorb at Si and SiO ₂ surfaces in the presence of ion bombardment. It was found that signals attributed to heavier species leaving the surface drop significantly when ion bombardment was initiated and net etching was observed with the microbalance. It was concluded that ion bombardment increased the surface reaction probability of C _xF _y species.

Original language	English (US)
Pages (from-to)	2508-2516
Number of pages	9
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1810166
State	Published - Nov 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1810166

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title = "Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO 2 surfaces",

abstract = "The use of fluorocarbon plasmas in semiconductors, thin film deposition and etching of Si and SiO 2 was analyzed. Investigations show that the molecules dissociatively adsorb at Si and SiO 2 surfaces in the presence of ion bombardment. It was found that signals attributed to heavier species leaving the surface drop significantly when ion bombardment was initiated and net etching was observed with the microbalance. It was concluded that ion bombardment increased the surface reaction probability of C xF y species.",

author = "Yoshie Kimura and Coburn, {J. W.} and Graves, {David B.}",

note = "Funding Information: The authors would like to thank David B. Fraser and Harold F. Winters for their helpful comments and wisdom. This work was supported by Center for Advanced Interconnect Science and Technology of Semiconductor Research Corporation and Department of Energy under Contract No. DE-FG0200ER54608.",

year = "2004",

month = nov,

doi = "10.1116/1.1810166",

language = "English (US)",

volume = "22",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO 2 surfaces

AU - Kimura, Yoshie

AU - Coburn, J. W.

AU - Graves, David B.

N1 - Funding Information: The authors would like to thank David B. Fraser and Harold F. Winters for their helpful comments and wisdom. This work was supported by Center for Advanced Interconnect Science and Technology of Semiconductor Research Corporation and Department of Energy under Contract No. DE-FG0200ER54608.

PY - 2004/11

Y1 - 2004/11

N2 - The use of fluorocarbon plasmas in semiconductors, thin film deposition and etching of Si and SiO 2 was analyzed. Investigations show that the molecules dissociatively adsorb at Si and SiO 2 surfaces in the presence of ion bombardment. It was found that signals attributed to heavier species leaving the surface drop significantly when ion bombardment was initiated and net etching was observed with the microbalance. It was concluded that ion bombardment increased the surface reaction probability of C xF y species.

AB - The use of fluorocarbon plasmas in semiconductors, thin film deposition and etching of Si and SiO 2 was analyzed. Investigations show that the molecules dissociatively adsorb at Si and SiO 2 surfaces in the presence of ion bombardment. It was found that signals attributed to heavier species leaving the surface drop significantly when ion bombardment was initiated and net etching was observed with the microbalance. It was concluded that ion bombardment increased the surface reaction probability of C xF y species.

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Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO ₂ surfaces

Abstract

All Science Journal Classification (ASJC) codes

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