Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s

T. Sajoto, M. Santos, J. J. Heremans, M. Shayegan, M. Heiblum, M. V. Weckwerth, U. Meirav

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Abstract

Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≅5×1011 cm-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.

Original languageEnglish (US)
Pages (from-to)840-842
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number9
DOIs
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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