Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s

T. Sajoto; M. Santos; J. J. Heremans; M. Shayegan; M. Heiblum; M. V. Weckwerth; U. Meirav

doi:10.1063/1.100862

Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×10⁶ cm²/V s

T. Sajoto, M. Santos, J. J. Heremans, M. Shayegan, M. Heiblum, M. V. Weckwerth, U. Meirav

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46 Scopus citations

Abstract

Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×10⁶ cm²/V s for an electron density of ≅5×10¹¹ cm^-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.

Original language	English (US)
Pages (from-to)	840-842
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	9
DOIs	https://doi.org/10.1063/1.100862
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100862

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title = "Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s",

abstract = "Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≅5×1011 cm-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.",

author = "T. Sajoto and M. Santos and Heremans, {J. J.} and M. Shayegan and M. Heiblum and Weckwerth, {M. V.} and U. Meirav",

year = "1989",

doi = "10.1063/1.100862",

language = "English (US)",

volume = "54",

pages = "840--842",

journal = "Applied Physics Letters",

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T1 - Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s

AU - Sajoto, T.

AU - Santos, M.

AU - Heremans, J. J.

AU - Shayegan, M.

AU - Heiblum, M.

AU - Weckwerth, M. V.

AU - Meirav, U.

PY - 1989

Y1 - 1989

N2 - Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≅5×1011 cm-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.

AB - Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≅5×1011 cm-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×10⁶ cm²/V s

Abstract

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