Abstract
Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature (≅4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≅5×1011 cm-2 - a factor of four improvement over the highest mobility reported for inverted interfaces.
Original language | English (US) |
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Pages (from-to) | 840-842 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 9 |
DOIs | |
State | Published - 1989 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)