TY - GEN
T1 - Use of Modified Radar REMPI for Localized Measurement of Temperature in Semiconductors
AU - Grunbok, Christopher J.
AU - Miles, Richard B.
AU - Dogariu, Arthur
N1 - Publisher Copyright:
© 2023, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.
PY - 2023
Y1 - 2023
N2 - We present here a non-intrusive method of surface temperature measurement under development using focused low-power laser induced conductivity combined with microwave scattering. Initial experiments are conducted with two semiconducting materials, GaAs and ZnSe, which were heated from room temperature to 55 ◦C, before and after which the focused laser was tuned from 780 to 940 nm and the microwave scattering monitored. A change of the microwave scattering signal with laser wavelength indicated a band gap shift in the GaAs. A change in conductivity lifetime and a potential phase shift in the GaAs were also observed. Results from ZnSe were inconsistent.
AB - We present here a non-intrusive method of surface temperature measurement under development using focused low-power laser induced conductivity combined with microwave scattering. Initial experiments are conducted with two semiconducting materials, GaAs and ZnSe, which were heated from room temperature to 55 ◦C, before and after which the focused laser was tuned from 780 to 940 nm and the microwave scattering monitored. A change of the microwave scattering signal with laser wavelength indicated a band gap shift in the GaAs. A change in conductivity lifetime and a potential phase shift in the GaAs were also observed. Results from ZnSe were inconsistent.
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U2 - 10.2514/6.2023-2052
DO - 10.2514/6.2023-2052
M3 - Conference contribution
AN - SCOPUS:85198995505
SN - 9781624106996
T3 - AIAA SciTech Forum and Exposition, 2023
BT - AIAA SciTech Forum and Exposition, 2023
PB - American Institute of Aeronautics and Astronautics Inc, AIAA
T2 - AIAA SciTech Forum and Exposition, 2023
Y2 - 23 January 2023 through 27 January 2023
ER -