Use of Modified Radar REMPI for Localized Measurement of Temperature in Semiconductors

Christopher J. Grunbok, Richard B. Miles, Arthur Dogariu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present here a non-intrusive method of surface temperature measurement under development using focused low-power laser induced conductivity combined with microwave scattering. Initial experiments are conducted with two semiconducting materials, GaAs and ZnSe, which were heated from room temperature to 55 ◦C, before and after which the focused laser was tuned from 780 to 940 nm and the microwave scattering monitored. A change of the microwave scattering signal with laser wavelength indicated a band gap shift in the GaAs. A change in conductivity lifetime and a potential phase shift in the GaAs were also observed. Results from ZnSe were inconsistent.

Original languageEnglish (US)
Title of host publicationAIAA SciTech Forum and Exposition, 2023
PublisherAmerican Institute of Aeronautics and Astronautics Inc, AIAA
ISBN (Print)9781624106996
DOIs
StatePublished - 2023
Externally publishedYes
EventAIAA SciTech Forum and Exposition, 2023 - Orlando, United States
Duration: Jan 23 2023Jan 27 2023

Publication series

NameAIAA SciTech Forum and Exposition, 2023

Conference

ConferenceAIAA SciTech Forum and Exposition, 2023
Country/TerritoryUnited States
CityOrlando
Period1/23/231/27/23

All Science Journal Classification (ASJC) codes

  • Aerospace Engineering

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