Use of a rapid anneal to improve CaF2:Si (100) epitaxy

Loren Pfeiffer; Julia M. Phillips; T. P. Smith; W. M. Augustyniak; K. W. West

doi:10.1063/1.95830

Use of a rapid anneal to improve CaF₂:Si (100) epitaxy

Loren Pfeiffer, Julia M. Phillips, T. P. Smith, W. M. Augustyniak, K. W. West

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF₂ films on Si (100). An anneal at 1100°C for 20 s in an Ar ambient reduced χ_min, the ratio of backscattered 1.8-MeV ⁴He⁺ ions in the aligned to random direction, from 0.26 for an as-grown CaF₂ film to 0.03 following the post-anneal. This is the best χ_min yet reported for the CaF ₂:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.

Original language	English (US)
Pages (from-to)	947-949
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	10
DOIs	https://doi.org/10.1063/1.95830
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.95830

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title = "Use of a rapid anneal to improve CaF2:Si (100) epitaxy",

abstract = "Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100°C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8-MeV 4He+ ions in the aligned to random direction, from 0.26 for an as-grown CaF2 film to 0.03 following the post-anneal. This is the best χmin yet reported for the CaF 2:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.",

author = "Loren Pfeiffer and Phillips, {Julia M.} and Smith, {T. P.} and Augustyniak, {W. M.} and West, {K. W.}",

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language = "English (US)",

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pages = "947--949",

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T1 - Use of a rapid anneal to improve CaF2:Si (100) epitaxy

AU - Pfeiffer, Loren

AU - Phillips, Julia M.

AU - Smith, T. P.

AU - Augustyniak, W. M.

AU - West, K. W.

PY - 1985

Y1 - 1985

N2 - Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100°C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8-MeV 4He+ ions in the aligned to random direction, from 0.26 for an as-grown CaF2 film to 0.03 following the post-anneal. This is the best χmin yet reported for the CaF 2:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.

AB - Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100°C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8-MeV 4He+ ions in the aligned to random direction, from 0.26 for an as-grown CaF2 film to 0.03 following the post-anneal. This is the best χmin yet reported for the CaF 2:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Use of a rapid anneal to improve CaF₂:Si (100) epitaxy

Abstract

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