Undoped high mobility two-dimensional hole-channel GaAs/Al xGa1-xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric

T. M. Lu, D. R. Luhman, K. Lai, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

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