Understanding the Crystal Packing and Organic Thin-Film Transistor Performance in Isomeric Guest–Host Systems

Anna K. Hailey, Anthony J. Petty, Jennifer Washbourne, Karl J. Thorley, Sean R. Parkin, John E. Anthony, Yueh Lin Loo

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


In order to understand how additives influence the structure and electrical properties of active layers in thin-film devices, a compositionally identical but structurally different guest–host system based on the syn and anti isomers of triethylsilylethynyl anthradithiophene (TES ADT) is systematically explored. The mobility of organic thin-film transistors (OTFTs) comprising anti TES ADT drops with the addition of only 0.01% of the syn isomer and is pinned at the mobility of OTFTs having pure syn isomer after the addition of only 10% of the isomer. As the syn isomer fraction increases, intermolecular repulsion increases, resulting in a decrease in the unit-cell density and concomitant disordering of the charge-transport pathway. This molecular disorder leads to an increase in charge trapping, causing the mobility of OTFTs to drop with increasing syn-isomer concentration. Since charge transport is sensitive to even minute fractions of molecular disorder, this work emphasizes the importance of prioritizing structural compatibility when choosing material pairs for guest–host systems.

Original languageEnglish (US)
Article number1700048
JournalAdvanced Materials
Issue number23
StatePublished - Jun 20 2017

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science


  • disorder
  • guest–host systems
  • isomers
  • organic semiconductors
  • organic thin-film transistors


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