Understanding the assembly of π-conjugated dithiol molecules on GaAs

Dmitry Krapchetov; Hong Ma; Daniel A. Fischer; Alex Jen; Yueh Lin Loo

Understanding the assembly of π-conjugated dithiol molecules on GaAs

Dmitry Krapchetov, Hong Ma, Daniel A. Fischer, Alex Jen, Yueh Lin Loo

Research output: Contribution to conference › Paper › peer-review

Abstract

The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.

Original language	English (US)
Pages	6769-6770
Number of pages	2
State	Published - 2004
Externally published	Yes
Event	2004 AIChE Annual Meeting - Austin, TX, United States Duration: Nov 7 2004 → Nov 12 2004

Other

Other	2004 AIChE Annual Meeting
Country/Territory	United States
City	Austin, TX
Period	11/7/04 → 11/12/04

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{dd47069e212140b7962712e9dbe14861,

title = "Understanding the assembly of π-conjugated dithiol molecules on GaAs",

abstract = "The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.",

author = "Dmitry Krapchetov and Hong Ma and Fischer, \{Daniel A.\} and Alex Jen and Loo, \{Yueh Lin\}",

year = "2004",

language = "English (US)",

pages = "6769--6770",

note = "2004 AIChE Annual Meeting ; Conference date: 07-11-2004 Through 12-11-2004",

}

TY - CONF

T1 - Understanding the assembly of π-conjugated dithiol molecules on GaAs

AU - Krapchetov, Dmitry

AU - Ma, Hong

AU - Fischer, Daniel A.

AU - Jen, Alex

AU - Loo, Yueh Lin

PY - 2004

Y1 - 2004

N2 - The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.

AB - The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.

UR - https://www.scopus.com/pages/publications/22544440859

UR - https://www.scopus.com/inward/citedby.url?scp=22544440859&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:22544440859

SP - 6769

EP - 6770

T2 - 2004 AIChE Annual Meeting

Y2 - 7 November 2004 through 12 November 2004

ER -

Understanding the assembly of π-conjugated dithiol molecules on GaAs

Abstract

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All Science Journal Classification (ASJC) codes

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