Abstract
The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.
Original language | English (US) |
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Pages | 6769-6770 |
Number of pages | 2 |
State | Published - 2004 |
Externally published | Yes |
Event | 2004 AIChE Annual Meeting - Austin, TX, United States Duration: Nov 7 2004 → Nov 12 2004 |
Other
Other | 2004 AIChE Annual Meeting |
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Country/Territory | United States |
City | Austin, TX |
Period | 11/7/04 → 11/12/04 |
All Science Journal Classification (ASJC) codes
- General Engineering