Understanding the assembly of π-conjugated dithiol molecules on GaAs

Dmitry Krapchetov, Hong Ma, Daniel A. Fischer, Alex Jen, Yueh Lin Loo

Research output: Contribution to conferencePaperpeer-review


The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.

Original languageEnglish (US)
Number of pages2
StatePublished - 2004
Externally publishedYes
Event2004 AIChE Annual Meeting - Austin, TX, United States
Duration: Nov 7 2004Nov 12 2004


Other2004 AIChE Annual Meeting
Country/TerritoryUnited States
CityAustin, TX

All Science Journal Classification (ASJC) codes

  • General Engineering


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