Understanding the assembly of π-conjugated dithiol molecules on GaAs

Dmitry Krapchetov, Hong Ma, Daniel A. Fischer, Alex Jen, Yueh Lin Loo

Research output: Contribution to conferencePaper

Abstract

The assembly of π-conjugated dithiol molecules on metals and on GaAs semiconductors using x-ray photoelectron spectroscopy (XPS) was investigated. Two doublets was observed in the S 2p region attribute to at least two distinct sulfur environments: sulfur bonded to the substrate, and free thiol endgroups. The results indicates that the doublet assigned to the sulfur-substrate bond is broader for molecular layers on GaAs. The observations sugggests that the number of non-equivalent bonding sites is higher on GaAs than on Au, which can be attributed to the presence of both S-Ga and S-As bonds.

Original languageEnglish (US)
Pages6769-6770
Number of pages2
StatePublished - Dec 1 2004
Externally publishedYes
Event2004 AIChE Annual Meeting - Austin, TX, United States
Duration: Nov 7 2004Nov 12 2004

Other

Other2004 AIChE Annual Meeting
CountryUnited States
CityAustin, TX
Period11/7/0411/12/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Krapchetov, D., Ma, H., Fischer, D. A., Jen, A., & Loo, Y. L. (2004). Understanding the assembly of π-conjugated dithiol molecules on GaAs. 6769-6770. Paper presented at 2004 AIChE Annual Meeting, Austin, TX, United States.