Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

Haizhou Yin, Karl D. Hobart, Rebecca L. Peterson, F. J. Kub, James Christopher Sturm

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Ultrathin, strained-silicon-on-insulator (s-SOI) structures without a residual silicon-germanium (SiGe) underlayer have been fabricated using stress balance of bi-layer structures on compliant borophosphorosilicate glass (BPSG). The bi-layer structure consisted of SiGe and silicon films, which were initially pseudomorphically grown on a silicon substrate and then transferred onto BPSG by a wafer bonding and SmartCut1 process. The viscous flow of the BPSG during a high-temperature anneal then allowed the SiGe/Si bi-layer to laterally coherently expand to reach stress balance, creating tensile strain in the silicon film. No dislocations are required for the process, making it a promising approach for achieving high-quality strained-silicon for device applications. To prevent the diffusion of boron and phosphorus into the silicon from the BPSG, a thin nitride film was inserted between the bi-layer and BPSG to act as a diffusion barrier, so that a lightly doped, sub-10-nm s-SOI layer (0.73% strain) was demonstrated. N-channel MOSFETs fabricated in a 25-nm silicon layer with 0.6% strain showed a mobility enhancement of 50%.

Original languageEnglish (US)
Pages (from-to)2207-2213
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number10
DOIs
StatePublished - Oct 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Compliant substrate
  • SiGe
  • Silicon-on-insulator (SOI)
  • Strained-Si

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