Ultrathin, high-efficiency, broad-band, omniacceptance, organic solar cells enhanced by plasmonic cavity with subwavelength hole array

Three of central challenges in solar cells are high light coupling into solar cell, high light trapping and absorption in a sub-absorptionlength- thick active layer, and replacement of the indium-tin-oxide (ITO) transparent electrode used in thin-film devices. Here, we report a proposal and the first experimental study and demonstration of a new ultra-thin highefficiency organic solar cell (SC), termed “plasmonic cavity with subwavelength hole-array (PlaCSH) solar cell”, that offers a solution to all three issues with unprecedented performances. The ultrathin PlaCSH-SC is a thin plasmonic cavity that consists of a 30 nm thick front metal–mesh electrode with subwavelength hole–array (MESH) which replaces ITO, a thin (100 nm thick) back metal electrode, and in-between a polymer photovoltaic active layer (P3HT/PCBM) of 85 nm thick (1/3 average absorption-length). Experimentally, the PlaCSH-SCs have achieved (1) light coupling–efficiency/absorptance as high as 96% (average 90%), broadband, and Omni acceptance (light coupling nearly independent of both light incident angle and polarization); (2) an external quantum efficiency of 69% for only 27% single-pass active layer absorptance; leading to (3) a 4.4% power conversion efficiency (PCE) at standard–solar–irradiation, which is 52% higher than the reference ITO-SC (identical structure and fabrication to PlaCSH-SC except MESH replaced by ITO), and also is among the highest PCE for the material system that was achievable previously only by using thick active materials and/or optimized polymer compositions and treatments. In harvesting scattered light, the Omni acceptance can increase PCE by additional 81% over ITO-SC, leading to a total 175% increase (i.e. 8% PCE). Furthermore, we found that (a) after formation of PlaCSH the light reflection and absorption by MESH are reduced by 2 to 6 fold from the values when it is alone; and (b) the sheet resistance of a 30 nm thick MESH is 2.2 ohm/sq or less–4.5 fold or more lower than the best reported value for a 100 nm thick ITO film, giving a lowest reflectance-sheetresistance product. Finally, fabrication of PlaCSH has used nanoimprint on 4” wafer and is scalable to roll-to-roll manufacturing. The designs, fabrications, and findings are applicable to thin solar cells in other materials.