Ultralow doping in organic semiconductors: Evidence of trap filling

Selina Olthof, Shafigh Mehraeen, Swagat K. Mohapatra, Stephen Barlow, Veaceslav Coropceanu, Jean Luc Brédas, Seth R. Marder, Antoine Kahn

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Abstract

Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C 60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C 60 by more than 3orders of magnitude, to reach 0.21cm2/(Vs).

Original languageEnglish (US)
Article number176601
JournalPhysical Review Letters
Volume109
Issue number17
DOIs
StatePublished - Oct 26 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Olthof, S., Mehraeen, S., Mohapatra, S. K., Barlow, S., Coropceanu, V., Brédas, J. L., Marder, S. R., & Kahn, A. (2012). Ultralow doping in organic semiconductors: Evidence of trap filling. Physical Review Letters, 109(17), [176601]. https://doi.org/10.1103/PhysRevLett.109.176601