TY - JOUR
T1 - Ultralow doping in organic semiconductors
T2 - Evidence of trap filling
AU - Olthof, Selina
AU - Mehraeen, Shafigh
AU - Mohapatra, Swagat K.
AU - Barlow, Stephen
AU - Coropceanu, Veaceslav
AU - Brédas, Jean Luc
AU - Marder, Seth R.
AU - Kahn, Antoine
PY - 2012/10/26
Y1 - 2012/10/26
N2 - Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C 60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C 60 by more than 3orders of magnitude, to reach 0.21cm2/(Vs).
AB - Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C 60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C 60 by more than 3orders of magnitude, to reach 0.21cm2/(Vs).
UR - http://www.scopus.com/inward/record.url?scp=84868030013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84868030013&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.109.176601
DO - 10.1103/PhysRevLett.109.176601
M3 - Article
C2 - 23215211
AN - SCOPUS:84868030013
SN - 0031-9007
VL - 109
JO - Physical review letters
JF - Physical review letters
IS - 17
M1 - 176601
ER -