Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane

K. H. Chung, N. Yao, Jay Burton Benziger, James Christopher Sturm, K. K. Singh, D. Carlson, S. Kuppurao

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700 °C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-mass spectroscopy and cross sectional transmission electron microscopy. Growth rates as high as 130 nmmin at 600 °C have been achieved. Growth rates in nitrogen and hydrogen ambients are about equal for neopentasilane, unlike those for growth with low-order silanes. A concerted reaction, where an open site is generated at the same time the adatom is adsorbed, is proposed as a possible mechanism for both the high growth rate with neopentasilane as well as the similar rate with hydrogen and nitrogen carriers.

Original languageEnglish (US)
Article number113506
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
StatePublished - Mar 28 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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