Abstract
A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700 °C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-mass spectroscopy and cross sectional transmission electron microscopy. Growth rates as high as 130 nmmin at 600 °C have been achieved. Growth rates in nitrogen and hydrogen ambients are about equal for neopentasilane, unlike those for growth with low-order silanes. A concerted reaction, where an open site is generated at the same time the adatom is adsorbed, is proposed as a possible mechanism for both the high growth rate with neopentasilane as well as the similar rate with hydrogen and nitrogen carriers.
Original language | English (US) |
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Article number | 113506 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 11 |
DOIs | |
State | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)