Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs

S. Y. Chou; Y. Liu; W. Khalil; T. Y. Hsiang; S. Alexandrou

doi:10.1063/1.107755

Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, S. Alexandrou

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

Metal-semiconductor-metal photodetectors of finger spacing and width as small as 100 nm have been fabricated on bulk and low-temperature grown GaAs, and tested using a femtosecond pulse laser and high-speed electro-optic sampling. The fastest photodetectors have a measured full width at half maximum impulse response and a 3-dB bandwidth of 0.87 ps and 510 GHz, respectively, for low-temperature grown GaAs limited by carrier recombination time; and of 1.5 ps and 295 GHz for bulk GaAs, limited by the RC time constant. To our knowledge, they are the fastest detectors of their kinds reported to date.

Original language	English (US)
Pages (from-to)	819-821
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	7
DOIs	https://doi.org/10.1063/1.107755
State	Published - 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.107755

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title = "Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs",

abstract = "Metal-semiconductor-metal photodetectors of finger spacing and width as small as 100 nm have been fabricated on bulk and low-temperature grown GaAs, and tested using a femtosecond pulse laser and high-speed electro-optic sampling. The fastest photodetectors have a measured full width at half maximum impulse response and a 3-dB bandwidth of 0.87 ps and 510 GHz, respectively, for low-temperature grown GaAs limited by carrier recombination time; and of 1.5 ps and 295 GHz for bulk GaAs, limited by the RC time constant. To our knowledge, they are the fastest detectors of their kinds reported to date.",

author = "Chou, \{S. Y.\} and Y. Liu and W. Khalil and Hsiang, \{T. Y.\} and S. Alexandrou",

year = "1992",

doi = "10.1063/1.107755",

language = "English (US)",

volume = "61",

pages = "819--821",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

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T1 - Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs

AU - Chou, S. Y.

AU - Liu, Y.

AU - Khalil, W.

AU - Hsiang, T. Y.

AU - Alexandrou, S.

PY - 1992

Y1 - 1992

N2 - Metal-semiconductor-metal photodetectors of finger spacing and width as small as 100 nm have been fabricated on bulk and low-temperature grown GaAs, and tested using a femtosecond pulse laser and high-speed electro-optic sampling. The fastest photodetectors have a measured full width at half maximum impulse response and a 3-dB bandwidth of 0.87 ps and 510 GHz, respectively, for low-temperature grown GaAs limited by carrier recombination time; and of 1.5 ps and 295 GHz for bulk GaAs, limited by the RC time constant. To our knowledge, they are the fastest detectors of their kinds reported to date.

AB - Metal-semiconductor-metal photodetectors of finger spacing and width as small as 100 nm have been fabricated on bulk and low-temperature grown GaAs, and tested using a femtosecond pulse laser and high-speed electro-optic sampling. The fastest photodetectors have a measured full width at half maximum impulse response and a 3-dB bandwidth of 0.87 ps and 510 GHz, respectively, for low-temperature grown GaAs limited by carrier recombination time; and of 1.5 ps and 295 GHz for bulk GaAs, limited by the RC time constant. To our knowledge, they are the fastest detectors of their kinds reported to date.

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DO - 10.1063/1.107755

M3 - Article

AN - SCOPUS:21544462531

SN - 0003-6951

VL - 61

SP - 819

EP - 821

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs

Abstract

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