Ultrafast Metal-Semiconductor-Metal Photodetectors with Nanometer Scale Finger Spacing and Width

Mark Y. Liu, Stephen Y. Chou, Sotiris Alexandrou, Thomas Y. Hsiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the fabrication and measurement of ultrafast nanoscale metal-semiconductor-metal photodetectors. The finger spacing and width as small as 25 nm are fabricated using electron beam lithography. Electrooptic sampling was performed at various wavelengths to measure the detectors' response time. The fastest detectors have response times and 3-dB bandwidths of 0.87 ps and 510 GHz on low-temperature GaAs, 1.5 ps and 300 GHz on bulk GaAs, and 3.7 ps and 110 GHz on bulk Si. To our knowledge, they are the fastest photodetectors of their kind. Scaling rules are also proposed.

Original languageEnglish (US)
Title of host publicationUltrafast Electronics and Optoelectronics, UEO 1993
PublisherOptica Publishing Group (formerly OSA)
Pages53-55
Number of pages3
ISBN (Electronic)9781557528209
StatePublished - 1993
Externally publishedYes
EventUltrafast Electronics and Optoelectronics, UEO 1993 - San Francisco, United States
Duration: Jan 25 1993Jan 25 1993

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceUltrafast Electronics and Optoelectronics, UEO 1993
Country/TerritoryUnited States
CitySan Francisco
Period1/25/931/25/93

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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