Abstract
We have studied carrier-carrier scattering in hot electron-hole plasmas, using both experiments and molecular dynamics calculations. Experiments were performed using photoluminescence via neutral acceptor recombination in GaAs. Moderate plasma densities were generated using femtosecond laser pulses at 1.7 eV. Experiments and calculations indicate that for hot non-equilibrium distributions carrier-carrier scattering can dominate the electron scattering at carrier densities as low as 8*1015cm-3. We discuss the nature of the carrier-carrier scattering and the validity of classical molecular dynamics calculations.
Original language | English (US) |
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Article number | 079 |
Pages (from-to) | 697-699 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 9 |
Issue number | 5 S |
DOIs | |
State | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry