Ultrafast dynamics of non-thermal carriers in GaAs

M. G. Kane, K. W. Sun, S. A. Lyon

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have studied carrier-carrier scattering in hot electron-hole plasmas, using both experiments and molecular dynamics calculations. Experiments were performed using photoluminescence via neutral acceptor recombination in GaAs. Moderate plasma densities were generated using femtosecond laser pulses at 1.7 eV. Experiments and calculations indicate that for hot non-equilibrium distributions carrier-carrier scattering can dominate the electron scattering at carrier densities as low as 8*1015cm-3. We discuss the nature of the carrier-carrier scattering and the validity of classical molecular dynamics calculations.

Original languageEnglish (US)
Article number079
Pages (from-to)697-699
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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