Ultrafast carrier activation in resonantly excited 1.3 μm InAs/GaAs quantum dots at room temperature

F. Quochi, M. Dinu, J. Shah, L. N. Pfeiffer, K. W. West, P. M. Platzman

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Carrier activation dynamics is measured in self-assembled InAs/GaAs quantum dots with a high degree of electronic state symmetry, at room temperature and following resonant excitation in the ground state. Carriers are activated to the first excited state on a 15-ps time scale in the low-excitation regime, and the total activation rate increases quadratically with the fractional dot occupation. Electron-hole interaction is identified as the dominant mechanism of electron scattering within the lowest confined states of a single quantum dot, circumventing the observation of a phonon bottleneck.

Original languageEnglish (US)
Article number161308
Pages (from-to)1613081-1613084
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number16
StatePublished - Apr 15 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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