Ultrafast carrier activation in resonantly excited 1.3-μm InAs/GaAs quantum dots at room temperature

F. Quochi; M. Dinu; J. Shah; L. N. Pfeiffer; K. W. West; P. M. Platzman

Ultrafast carrier activation in resonantly excited 1.3-μm InAs/GaAs quantum dots at room temperature

F. Quochi, M. Dinu, J. Shah, L. N. Pfeiffer, K. W. West, P. M. Platzman

Research output: Contribution to conference › Paper › peer-review

Abstract

Room-temperature e-h pair activation from the N=1 to the N=2 state of InAs quantum dots (QDs) with almost circular symmetry was demonstrated to occur on a 15-ps time scale at low densities. Evidence show that phonon bottleneck can always be circumvented in such systems.

Original language	English (US)
Pages	179-180
Number of pages	2
State	Published - 2002
Externally published	Yes
Event	Quantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States Duration: May 19 2002 → May 24 2002

Other

Other	Quantum Electronics and Laser Science (QELS) 2002
Country/Territory	United States
City	Long Beach, CA
Period	5/19/02 → 5/24/02

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Ultrafast carrier activation in resonantly excited 1.3-μm InAs/GaAs quantum dots at room temperature",

abstract = "Room-temperature e-h pair activation from the N=1 to the N=2 state of InAs quantum dots (QDs) with almost circular symmetry was demonstrated to occur on a 15-ps time scale at low densities. Evidence show that phonon bottleneck can always be circumvented in such systems.",

author = "F. Quochi and M. Dinu and J. Shah and Pfeiffer, {L. N.} and West, {K. W.} and Platzman, {P. M.}",

year = "2002",

language = "English (US)",

pages = "179--180",

note = "Quantum Electronics and Laser Science (QELS) 2002 ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - CONF

T1 - Ultrafast carrier activation in resonantly excited 1.3-μm InAs/GaAs quantum dots at room temperature

AU - Quochi, F.

AU - Dinu, M.

AU - Shah, J.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Platzman, P. M.

PY - 2002

Y1 - 2002

N2 - Room-temperature e-h pair activation from the N=1 to the N=2 state of InAs quantum dots (QDs) with almost circular symmetry was demonstrated to occur on a 15-ps time scale at low densities. Evidence show that phonon bottleneck can always be circumvented in such systems.

AB - Room-temperature e-h pair activation from the N=1 to the N=2 state of InAs quantum dots (QDs) with almost circular symmetry was demonstrated to occur on a 15-ps time scale at low densities. Evidence show that phonon bottleneck can always be circumvented in such systems.

UR - http://www.scopus.com/inward/record.url?scp=0036367336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036367336&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036367336

SP - 179

EP - 180

T2 - Quantum Electronics and Laser Science (QELS) 2002

Y2 - 19 May 2002 through 24 May 2002

ER -

Ultrafast carrier activation in resonantly excited 1.3-μm InAs/GaAs quantum dots at room temperature

Abstract

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All Science Journal Classification (ASJC) codes

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